Small-Signal Transient Double Injection in Semiconductors Heavily Doped with Deep Traps

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Abstract
The small signal transient response is discussed for double‐injection diodes operating in the low injection square‐law regime. This regime occurs, preceding the negative resistance regime, in long structures heavily doped with deep recombination centers. An expression is derived for the ac impedance, and the result is characterized by a simple equivalent circuit. The theory predicts that two distinct decay modes with different time constants, one each for electrons and holes, should be observed in the transient response. Experimental results for Au‐doped Si p‐i‐n diodes with three different doping concentrations are presented. These show generally good agreement with the theory. In particular the time constants and the relative magnitudes of the two decay modes observed in p‐type Si slightly overcompensated with Au agree well with those calculated using known values for the capture coefficients and mobilities.