Germanium Implantation into Silicon: An Alternate Pre-Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Technology
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 1 reference indexed in Scilit:
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979