Modeling of boron diffusion in polysilicon-on-silicon structures using a rapid thermal anneal step for ultra-shallow junction formation
- 30 June 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 32 (1-2) , 25-32
- https://doi.org/10.1016/0921-5107(94)01156-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal SiJournal of Electronic Materials, 1993
- Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, as-deposited polycrystalline Si-on-single crystal Si diodesJournal of Electronic Materials, 1993
- Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structuresJournal of Electronic Materials, 1993
- Analysis of ion-implanted amorphous and polycrystalline silicon films as diffusion sources for ultrashallow junctionsJournal of Applied Physics, 1991
- Study of a WSi2/polycrystalline silicon/monocrystalline silicon structure for a complementary metal-oxide-semiconductor for a compatible self-aligned bipolar transistor emitterJournal of Applied Physics, 1990
- Polycrystalline Silicon Emitter Contacts Formed by Rapid Thermal AnnealingJournal of the Electrochemical Society, 1989
- An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observationsJournal of Applied Physics, 1987
- Structure and morphology of polycrystalline silicon-single crystal silicon interfacesJournal of Applied Physics, 1985
- The poly-single crystalline silicon interfaceJournal of Applied Physics, 1984
- Excess vacancy generation mechanism at phosphorus diffusion into siliconJournal of Applied Physics, 1974