Effects of Dopants and Deformation Temperature on Stacking Fault Energy in GaAs
- 16 August 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 102 (2) , 625-632
- https://doi.org/10.1002/pssa.2211020221
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Impurity effect in stacking fault energy of silicon crystals studied by high resolution electron microscopyPhysica Status Solidi (a), 1981
- The Structure And Electrical Properties Of Dislocations In SemiconductorsJournal of Microscopy, 1980
- The dissociation of dislocations in GaAsPhilosophical Magazine A, 1978
- Stacking fault energy and ionicity of cubic III–V compoundsPhysica Status Solidi (a), 1978
- Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or ZnJournal of the American Ceramic Society, 1975
- Deformation of single crystals of gallium arsenideJournal of Materials Science, 1973
- The principles and practice of the weak‐beam method of electron microscopyJournal of Microscopy, 1973
- The measurement of stacking-fault energies of pure face-centred cubic metalsPhilosophical Magazine, 1971
- The Elastic Constants of CrystalsPublished by Elsevier ,1958