Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
- 15 October 2006
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 527-529, 175-178
- https://doi.org/10.4028/www.scientific.net/msf.527-529.175
Abstract
Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and batch CVD systems. Variations of the chlorosilane flow under fixed conditions of gas composition, temperature and pressure resulted in growth rates between 4 to 20 μm/hr. Fixing the chlorosilane flow rate to achieve a growth rate of approximately 4 μm/hr, the effects of temperature, pressure and gas composition on background dopant incorporation, epitaxial layer uniformity and epitaxial defect generation were investigated. Intentional n and p-type doping has been demonstrated over the carrier range 1×1018-1×1020/cm3. This paper presents the first reported of use of chlorosilane precursors to grow high quality undoped, n and p doped SiC epilayers.Keywords
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