Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 1085-1088
- https://doi.org/10.4028/www.scientific.net/msf.457-460.1085
Abstract
No abstract availableKeywords
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