Accurate measurement of reflectivity over wavelength of a laser diode antireflection coating using an external cavity laser
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 11 (7) , 1162-1167
- https://doi.org/10.1109/50.238077
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Characteristics of a grating-external-cavity semiconductor laser containing intracavity prism beam expandersJournal of Lightwave Technology, 1992
- Bistability in grating-tuned external-cavity semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- GaInAsP semiconductor laser amplifiers for single-mode fiber communicationsJournal of Lightwave Technology, 1987
- External-cavity semiconductor laser with 15 nm continuous tuning rangeElectronics Letters, 1986
- Measurement of the modal reflectivity of an antireflection coating on a superluminescent diodeIEEE Journal of Quantum Electronics, 1983
- 10 kHz linewidth 1.5 μm InGaAsP external cavity laser with 55 nm tuning rangeElectronics Letters, 1983
- Coherent optical interference effects in external-cavity semiconductor lasersIEEE Journal of Quantum Electronics, 1981