Common and unique aspects of perovskite thin film CVD processes
- 1 September 1998
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 21 (1) , 273-289
- https://doi.org/10.1080/10584589808202070
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- MOCVD of advanced dielectric and ferroelectric films by liquid deliveryIntegrated Ferroelectrics, 1997
- Quantum jumps in FeRAM technology and performanceIntegrated Ferroelectrics, 1997
- Characteristics of ferroelectric SrBi2Ta2O9 thin films grown by “flash” MOCVDIntegrated Ferroelectrics, 1997
- Metalorganic Chemical Vapor Deposition of Complex Metal Oxide Thin Films by Liquid Source Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- MOCVD of BaSrTiO3 for ulsi dramsIntegrated Ferroelectrics, 1995
- Trends in the development of ULSI DRAM capacitorsIntegrated Ferroelectrics, 1994
- Signal magnitudes in high density ferroelectric memoriesIntegrated Ferroelectrics, 1994
- High quality lead zirconate titanate films grown by organometallic chemical vapour depositionIntegrated Ferroelectrics, 1993
- Advances in Precursor Development for CVD of Bariumcontaining MaterialsMRS Proceedings, 1993
- TdI10: Ferroelectric thin films in integrated microelectronic devicesFerroelectrics, 1992