Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (2) , 82-84
- https://doi.org/10.1109/55.981313
Abstract
N-channel ferroelectric dynamic random access memory (FEDRAM) FETs with SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si structure were fabricated and characterized. The estimated switching time (t/sub sw/) of the fabricated FET, measured at applied electric field of 376 kV/cm, was less than 50 ns, which could be significantly reduced upon scaling. Its remnant polarization (2P/sub r/) was measured to be about 1.5 /spl mu/C/cm/sup 2/, which is more than one order of magnitude higher than that required for FEDRAM operation. The stored information retains more than three orders of magnitude of on/off ratio up to three days at room temperature, with little fatigue after 10/sup 11/ switching cycles.Keywords
This publication has 11 references indexed in Scilit:
- Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9 Films and Ultra-Thin SiN Buffer LayersJapanese Journal of Applied Physics, 2000
- Ferroelectricity in PbTiO3 Thin Films: A First Principles ApproachJournal of Electroceramics, 2000
- Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin filmsApplied Physics Letters, 1999
- Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)Integrated Ferroelectrics, 1999
- Crystal structures and ferroelectric properties of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9Applied Physics Letters, 1999
- SrBi 2 Ta 2 O 9 memory capacitor on Si with a silicon nitride bufferApplied Physics Letters, 1998
- Making silicon nitride film a viable gate dielectricIEEE Transactions on Electron Devices, 1998
- Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structuresIEEE Electron Device Letters, 1997
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- A new ferroelectric memory device, metal-ferroelectric-semiconductor transistorIEEE Transactions on Electron Devices, 1974