Temperature dependence of the optical-absorption edge inthin films
- 15 October 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (15) , 10060-10063
- https://doi.org/10.1103/physrevb.58.10060
Abstract
The optical absorption edge of semiconductor films is studied in a wide temperature range of 8.8–470 K. We find three temperature regimes for both the optical gap and the Urbach tail parameter in the range they do not change; they change gradually; and they change rapidly. We also find that the subgap absorption increases with prolonged exposure of the film to air but the Urbach tail parameter is not affected. The results are discussed in terms of the relation of the electron density of states to the molecular orientational disorder and the structural phase transition.
Keywords
This publication has 17 references indexed in Scilit:
- Temperature dependence of the conductivity and kinetics of oxygen intercalation offilmsPhysical Review B, 1998
- Anomalous photoconductance band insingle crystalPhysical Review B, 1995
- Optical Energy Gap and Below Gap Optical Absorption of Fullerene Films Measured by the Constant Photocurrent Method and Photothermal Deflection SpectroscopyFullerene Science and Technology, 1995
- Potical Energy Gap and Below Gap Optical Absorption of Fullerene Films Measured By Constant Photocurrent Method and Photothermal Deflection SpectroscopyFullerene Science and Technology, 1995
- Band gap, excitons, and Coulomb interaction in solidPhysical Review Letters, 1992
- Ground state and phase transitions in solidPhysical Review Letters, 1992
- Orientational Disorder and Electronic States in and , where A is an Alkali MetalPhysical Review Letters, 1992
- Crystal structure and bonding of ordered C60Nature, 1991
- Orientational ordering transition in solidPhysical Review Letters, 1991
- Vibrational Amplitudes in Germanium and SiliconPhysical Review B, 1962