Structural and electrical properties of BF+2 implanted, rapid annealed silicon
- 15 November 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10) , 1056-1058
- https://doi.org/10.1063/1.95066
Abstract
A comparison has been made between ion implantation damage, implanted impurity profiles, and the dopant electrical characteristics in silicon implanted with boron fluoride and rapid annealed. The rapid anneal is accompanied by outdiffusion of fluorine except in regions containing residual implantation damage in the form of dislocation loops. During the anneal the boron dopant becomes electrically activated.Keywords
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