The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski Method
- 1 April 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (4)
- https://doi.org/10.1143/jjap.9.361
Abstract
The problem of thermal conduction during the crystal growth process is solved computationally using a model simplified to involve the essential features of the Czochralski crystal growth system. In the crystal the Laplace equation is solved, while in the melt the modified Laplace equation taking account of the fluid motion and the Navier-Stokes equations with the bouyant force being considered are solved simultaneously. The solid-liquid interface shapes are calculated as a function of the crystal rotation rate. Without the crystal rotation, the solid-liquid interface shape is concave to the melt and it becomes more concave as the crystal rotation rate increases. This dependence of the solid-liquid interface shape on the crystal rotation rate is explained by taking the fluid motion into account.Keywords
This publication has 12 references indexed in Scilit:
- The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski MethodJapanese Journal of Applied Physics, 1969
- The morphology and defect characteristics of vertically pulled MgAl2O4 single crystalsJournal of Materials Science, 1969
- Analysis of the temperature distribution in pulled crystalsJournal of Crystal Growth, 1968
- Nonmixing Cells due to Crucible Rotation during Czochralski Crystal GrowthJournal of Applied Physics, 1968
- Radial Solute Segregation in Czochralski GrowthJournal of the Electrochemical Society, 1967
- Macroscopic Interface Shape During SolidificationJournal of Heat Transfer, 1966
- Turbulent Free Convection in Czochralski Crystal GrowthJournal of Applied Physics, 1965
- The temperature distribution in pulled germanium crystals during growthSolid-State Electronics, 1964
- Cross-sectional resistivity variations in germanium single crystalsSolid-State Electronics, 1960
- Emissivity at 0.65 Micron of Silicon and Germanium at High TemperaturesJournal of Applied Physics, 1957