Enhancement type InP metal-insulator-semiconductor field-effect transistor with plasma anodic aluminium oxide as the gate insulator
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 712-713
- https://doi.org/10.1063/1.93244
Abstract
Enhancement type InP metal-insulator-semiconductor field-effect transistors were fabricated using plasma anodic aluminium oxide as the gate insulator. The effective electron mobilities in the surface channel are 1250 cm2/Vs and 2000 cm2/Vs at 300 and 80 K, respectively. The drift of the drain current at 300 K ceases a few minutes after applying a gate voltage and stable dc operation is observed over several hours.Keywords
This publication has 3 references indexed in Scilit:
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