Ion Implanted Buried Si3N4 Layers below Epitaxial NSi2 Layers
- 16 April 1989
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 112 (2) , 733-738
- https://doi.org/10.1002/pssa.2211120232
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985
- The formation of buried Si3N4 layers in silicon by high dose nitrogen ion implantationThin Solid Films, 1983
- A Review of Silicon-On-Insulator Formation by Oxygen Ion ImplantationMRS Proceedings, 1983