A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation

This publication has 15 references indexed in Scilit:

• Simox technology and its application to CMOS LSIS
  Journal of Electronic Materials, 1983
• Electric-field-shielding layers formed by oxygen implantation into silicon
  Electronics Letters, 1983
• VLSI Materials: A Comparison between Buried Oxide SOI and SOS
  IEEE Transactions on Nuclear Science, 1983
• Thermal annealing behavior of an oxide layer under silicon
  Applied Physics Letters, 1982
• Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO₂ and Si₃N₄ Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon
  Japanese Journal of Applied Physics, 1982
• Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth
  Japanese Journal of Applied Physics, 1981
• Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation
  Electronics Letters, 1981
• Formation of Abrupt Interfaces between Surface Silicon and Buried SiO₂ Layers by Very High Dose Oxygen-Ion Implantation
  Japanese Journal of Applied Physics, 1980
• C.M.O.S. devices fabricated on buried SiO ² layers formed by oxygen implantation into silicon
  Electronics Letters, 1978
• Epitaxial silicon layers grown on ion-implanted silicon nitride layers
  Applied Physics Letters, 1973