VLSI Materials: A Comparison between Buried Oxide SOI and SOS
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (2) , 1722-1725
- https://doi.org/10.1109/tns.1983.4332624
Abstract
High dose oxygen ion implantation in Si has been used to form a 0.48 μm thick buried oxide layer. The total dose was 2.1 × 1018 0+/cm2 implanted at 150 keV/atom. Epitaxial growth was employed to deposit a 0.38 μm thick layer on top of the implanted wafers. High quality single crystal Si on the entire 76 mm diameter wafer was acheived. The microstructure of the buried oxide SOI is compared to SOS material.Keywords
This publication has 7 references indexed in Scilit:
- Optical characterization of silicon and sapphire surfaces as related to SOS discrete device performanceJournal of Crystal Growth, 1982
- A model for interpretation of X-ray rocking curve half-widths in SOSJournal of Crystal Growth, 1982
- An Investigation of the Properties of an Epitaxial Si Layer on a Substrate with a Buried SiO2 Layer Formed by Oxygen-Ion ImplantationJapanese Journal of Applied Physics, 1982
- A high-speed buried channel MOSFET isolated by an implanted silicon dioxide layerIEEE Transactions on Electron Devices, 1981
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- XXXIX. On the α particles of radium, and their loss of range in passing through various atoms and moleculesJournal of Computers in Education, 1905