Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2149-2151
- https://doi.org/10.1143/jjap.29.l2149
Abstract
This report describes the first successful growth of GaAs by metalorganic-chloride vapor phase epitaxy in a cold-wall-type reactor. Triethylgallium was adopted as the group III source material, and AsCl3 instead of fatally toxic AsH3 was used as the arsenic source. Growth rates of about 10 µm/h with mirror like surfaces were obtained at the growth temperature of 650°C. The growth rate study on this system showed that mass transport was the rate-determining step in the overall process.Keywords
This publication has 6 references indexed in Scilit:
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988
- Comparison of alternate As-sources to arsine in the MOCVD growth of GaAsJournal of Crystal Growth, 1988
- In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3Journal of Crystal Growth, 1988
- Growth of InP and InGaAs by MO-Chloride VPEJapanese Journal of Applied Physics, 1986
- GaAs Growth Using TMG and AsCl3Journal of the Electrochemical Society, 1985
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969