Comments on '18-GHz 1/8 dynamic frequency divider using Si bipolar technologies (and reply)
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (8) , 1176
- https://doi.org/10.1109/4.90073
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Super self-aligned process technology (SST) and its applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 9 GHz bandwidth, 8–20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technologyElectronics Letters, 1989
- 18-GHz 1/8 dynamic frequency divider using Si bipolar technologiesIEEE Journal of Solid-State Circuits, 1989
- 7.3-GHz dynamic frequency dividers monolithically integrated in a standard bipolar technologyIEEE Transactions on Microwave Theory and Techniques, 1988
- Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technologyElectronics Letters, 1985