7.3-GHz dynamic frequency dividers monolithically integrated in a standard bipolar technology

This publication has 10 references indexed in Scilit:

• Bipolar high-gain limiting amplifier IC for optical-fiber receivers operating up to 4 Gbit/s
  IEEE Journal of Solid-State Circuits, 1987
• Static 7 GHz frequency divider IC based on a 2 μm Si bipolar technology
  Electronics Letters, 1987
• A 4:1 time-division multiplexer IC for bit rates up to 6 Gbit/s based on a standard bipolar technology
  IEEE Journal of Solid-State Circuits, 1986
• 14 GHz band GaAs monolithic analogue frequency divider
  Electronics Letters, 1985
• Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology
  Electronics Letters, 1985
• A 9-GHz frequency divider using Si bipolar super self-aligned process technology
  IEEE Electron Device Letters, 1985
• Regenerative Frequency Division with a GaAs FET
  IEEE Transactions on Microwave Theory and Techniques, 1984
• A simple but efficient analog computer for simulation of high-speed integrated circuits
  IEEE Journal of Solid-State Circuits, 1977
• Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections
  Electronics Letters, 1977
• Fractional-Frequency Generators Utilizing Regenerative Modulation
  Proceedings of the IRE, 1939