Ion implantation and integrated optics

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Abstract
The development of integrated electronic circuitry has generated closely related ideas for complete systems which process signals at optical frequencies. The design and performance of individual components are already well documented and current progress is toward integrated optical devices. The initial production methods for individual components are not necessarily suitable for complete circuits but it is suggested that the technique of ion implantation may have general application and solve many of the problems. The advantages of accurate dopant levels, excellent spatial control and the ability to profile refractive index or electro-optic properties, whilst maintaining the sample at a chosen temperature, are very attractive. Examples are considered for a range of materials including GaAs, LiNbO3 and LiTaO3 which are currently at the centre of interest in integrated optics.