Low-temperature mobility of two-dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures
- 2 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1) , 36-38
- https://doi.org/10.1063/1.100826
Abstract
Low‐field mobility of two‐dimensional electron gas (2DEG) in selectively doped pseudomorphic N‐Al0.3Ga0.7As/ Ga0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low‐field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.Keywords
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