SiGe technology bears fruits
- 1 February 2002
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 89 (1-3) , 13-20
- https://doi.org/10.1016/s0921-5107(01)00783-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- ErratumPharmacology & Therapeutics, 2000
- Waste treatment systemMetal Finishing, 2000
- Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base LayersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2000
- Investigation of the Effectiveness of a Buried Carbon Layer to Suppress Transient Diffusion Effects in SiGe HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2000
- Hypertexte et complexitéÉtudes françaises, 2000
- L'histoire et les arts libérauxCommentaire, 1999
- SiGe-HBTs for mobile communicationSolid-State Electronics, 1999
- Si/Si/sub 1-x/Gex heterojunction bipolar transistors with high breakdown voltageIEEE Electron Device Letters, 1995