Ionization of atomic oxygen on the surface of a specimen in plasma anodization
- 1 March 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (5) , 1866-1873
- https://doi.org/10.1063/1.342921
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Low Temperature Oxidation of Silicon in a Microwave‐Discharged Oxygen PlasmaJournal of the Electrochemical Society, 1985
- A New Technique for High Speed Anodization in a dc Oxygen Glow DischargeJournal of Vacuum Science and Technology, 1973
- Comparative Study of Plasma Anodization of Silicon in a Column of a dc Glow DischargeApplied Physics Letters, 1971
- Factors Affecting the Growth Rate of Plasma A nodi zed Al[sub 2]O[sub 3]Journal of the Electrochemical Society, 1971
- Ionic Current as a Function of Field in the Oxide during Plasma Anodization of Tantalum and NiobiumJournal of the Electrochemical Society, 1970
- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967
- Gas Phase Anodization of TantalumJournal of the Electrochemical Society, 1967
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965
- Plasma Anodized Aluminum Oxide FilmsJournal of the Electrochemical Society, 1964
- The Formation of Metal Oxide Films Using Gaseous and Solid ElectrolytesJournal of the Electrochemical Society, 1963