Computer simulation of adsorption of Cu atoms on W(100) and W(110) surfaces
- 1 May 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 33 (2) , 212-214
- https://doi.org/10.1016/0022-0248(76)90045-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Calculation of potential energy parameters form crystalline state propertiesPhysica Status Solidi (a), 1975
- Structure and shape of epitaxial overgrowthsJournal of Crystal Growth, 1975
- Adsorption and condensation of Cu on W single-crystal surfacesJournal of Applied Physics, 1974
- Transport and equilibrium properties of simple gases and forces between like and unlike atomsPhysica, 1971
- The epitaxial growth of copper on the (110) surface of a tungsten single crystal studied by LEED, Auger electron, and work function techniquesSurface Science, 1969
- Influence of Adsorbed Gas on Surface Diffusion and NucleationJournal of Applied Physics, 1966
- Nucleation and Epitaxial Growth of Cu on WJournal of Applied Physics, 1965
- Adsorption and Surface Diffusion of Copper on TungstenThe Journal of Chemical Physics, 1965
- Epitaxial Growth of Cu on W Field EmittersThe Journal of Chemical Physics, 1963