Characterization of gaas by far infrared reflectivity
- 30 November 1973
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 13 (4) , 321-326
- https://doi.org/10.1016/0020-0891(73)90042-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Far infrared free-carrier absorption in n-type gallium arsenideJournal of Physics and Chemistry of Solids, 1971
- Infrared techniques for semiconductor characterizationInfrared Physics, 1970
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- Interaction of Plasmons and Optical Phonons in Degenerate SemiconductorsPhysical Review B, 1966
- Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAsPhysical Review Letters, 1966
- Coupling of Plasmons to Polar Phonons in Degenerate SemiconductorsPhysical Review B, 1965
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960