Photoluminescence studies of stress relief in selectively grown GaAs on Si by metalorganic chemical vapor deposition
- 31 October 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 76 (3) , 303-306
- https://doi.org/10.1016/0038-1098(90)90842-y
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Analysis for dislocation density reduction in selective area grown GaAs films on Si substratesApplied Physics Letters, 1990
- Tensile stress variations of chemically etched GaAs films grown on Si substratesApplied Physics Letters, 1988
- Stress variations and relief in patterned GaAs grown on mismatched substratesApplied Physics Letters, 1988
- Photoluminescence studies of selective-area molecular beam epitaxy of GaAs film on Si substrateApplied Physics Letters, 1988
- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986