Formation of thin Si3N4 films by nitrogen ion implantation into silicon
- 1 May 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 59 (3) , 313-317
- https://doi.org/10.1016/0040-6090(79)90440-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976
- Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1966