Over 1.3 µm CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate
- 2 September 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (18) , 1120-1121
- https://doi.org/10.1049/el:20045894
Abstract
No abstract availableKeywords
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- Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor depositionApplied Physics Letters, 2001
- Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laserApplied Physics Letters, 1996
- Estimation of Threshold Current of Microcavity Surface Emitting Laser with Cylindrical WaveguideJapanese Journal of Applied Physics, 1991