High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 1105-1108
- https://doi.org/10.4028/www.scientific.net/msf.457-460.1105
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiCMaterials Science Forum, 2003
- Localized electronic states around stacking faults in silicon carbidePhysical Review B, 2001