Temperature enhancement of the photorefractive effect in GaAs due to the metastable state of theEL2 defect
- 15 December 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (23) , 16973-16984
- https://doi.org/10.1103/physrevb.50.16973
Abstract
We present a theoretical and experimental analysis of photorefractive two-beam coupling in undoped GaAs as a function of temperature. The theoretical treatment includes the metastable state of the EL2 defect with its optical properties (optical generation and optical recovery) in the photorefractive model. Three major features are predicted by this model: First, a change of the sign of the photorefractive beam coupling gain around 150 K; second, an enhancement of the space-charge field by a factor of 2 compared to the diffusion field; and, finally, the appearance of a strong peak due to an absorption grating around 150 K. All these features are actually observed experimentally with a good correlation between experimental data and theoretical simulation.Keywords
This publication has 30 references indexed in Scilit:
- Photorefractive measurements on electron-irradiated semi-insulating GaAsApplied Physics A, 1994
- Temperature dependence of the photorefractive effect in InP:Fe: role of multiple defectsJournal of the Optical Society of America B, 1992
- Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium tellurideApplied Physics A, 1992
- Hologram recording in GaAs through EL2 intracentre absorptionOptics Communications, 1992
- Continuous-wave two-beam coupling in InP:Fe and GaAs: evidence for thermal hole–electron competition in InP:FeJournal of the Optical Society of America B, 1990
- Deep level photodiffractive spectroscopy of semiconductorsApplied Physics Letters, 1990
- Spatial modulation of the Fermi level by coherent illumination of undoped GaAsPhysical Review B, 1989
- Native defects in gallium arsenideJournal of Applied Physics, 1988
- The role of deep-level centers and compensation in producing semi-insulating GaAsJournal of Applied Physics, 1983
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980