Temperature distribution and power dissipation in MOSFETs
- 30 April 1984
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (4) , 394-395
- https://doi.org/10.1016/0038-1101(84)90175-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A two-dimensional model of the avalanche effects in MOS transistorsSolid-State Electronics, 1982
- A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistorsSolid-State Electronics, 1979
- Accurate calculations of the forward drop and power dissipation in thyristorsIEEE Transactions on Electron Devices, 1978
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- Thermal Conductivity of Silicon and Germanium from 3°K to the Melting PointPhysical Review B, 1964