A two-dimensional model of the avalanche effects in MOS transistors
- 31 March 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (3) , 177-183
- https://doi.org/10.1016/0038-1101(82)90105-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- MINIMOS—A two-dimensional MOS transistor analyzerIEEE Transactions on Electron Devices, 1980
- A numerical model of avalanche breakdown in MOSFET'sIEEE Transactions on Electron Devices, 1978
- Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctionsIEEE Transactions on Electron Devices, 1975
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Charge multiplication in silicon p-n junctionsSolid-State Electronics, 1963
- Ionization Rates for Electrons and Holes in SiliconPhysical Review B, 1958
- Theory of the Flow of Electrons and Holes in Germanium and Other SemiconductorsBell System Technical Journal, 1950