A high-frequency fully differential BiCMOS operational amplifier
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (3) , 203-208
- https://doi.org/10.1109/4.74997
Abstract
This paper presents a high-frequency frdly differential BiCMOS operational amplifier designed for use in switched-capacitor circuits. The OP amp is integrated in a 3. O-GHZ, 2- ~m BiCMOS process with an active die area of 1.0 mm x 1.2 mm. This BiCMOS op amp offers an infinite input resistance, a dc gain of 100 dB, a nnity-gain freqnency of 90 MHz with 45° phase margin, and a slew rate of 150 V/ ps. The differential output range is 12 V. The circnit is operated from a f 5-V power supply and dissipates 125 mW. The op amp is nnity-gain stable with 7 pF of capacitive loading at each output. The op amp is a two-stage, pole-split frequency compensated design that employs a PMOS input stage for infinite input resistance and an n-p-n bipolar second stage for high gain and high bandwidth. The frequency compensation network serves both the differential- and common-mode amplifiers so the differential- and common-mode amplifier dynamics are similar. A dynamic switched-capacitor common-mode feedback scheme is used to set the output common-mode level of the first and second stages.Keywords
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