Comment on "Linearity... of Valence-Band Discontinuity in Heterojunctions with Te-Based II-VI Semiconductors: CdTe, HgTe, and ZnTe"
- 13 June 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (24) , 2560
- https://doi.org/10.1103/physrevlett.60.2560
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.60.2560Keywords
This publication has 8 references indexed in Scilit:
- Band offsets at interfaces between HgTe, CdTe, and InSbJournal of Vacuum Science & Technology B, 1987
- Anomalous confinement effects in HgTe-CdTe superlatticesPhysical Review B, 1987
- Heterojunction valence-band-discontinuity dependence on face orientationPhysical Review B, 1987
- Linearity (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe, and ZnTePhysical Review Letters, 1987
- Band Lineups at II-VI Heterojunctions: Failure of the Common-Anion RulePhysical Review Letters, 1986
- CdTe-HgTe (¯1¯1¯1) Heterojunction Valence-Band Discontinuity: A Common-Anion-Rule ContradictionPhysical Review Letters, 1986
- Optical investigation of hole and electron subbands in HgTe-CdTe superlatticesPhysical Review Letters, 1985
- Magneto-Optical Investigations of a Novel Superlattice: HgTe-CdTePhysical Review Letters, 1983