Epitaxial necking in GaAs grown on pre-pattemed Si substrates
- 1 July 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (7) , 839-853
- https://doi.org/10.1007/bf02665973
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substratesJournal of Electronic Materials, 1990
- Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areasApplied Physics Letters, 1990
- The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructuresJournal of Vacuum Science & Technology B, 1989
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processingIEEE Electron Device Letters, 1989
- Reduction of Thermal Stress in Mbe Grown GaAs/Si by PatterningMRS Proceedings, 1989
- Reduction of Defect Density in Heteroepitaxial GexSi1-x Grown on Patterned Si SubstratesMRS Proceedings, 1989
- Elimination of interface defects in mismatched epilayers by a reduction in growth areaApplied Physics Letters, 1988
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970