Double Ridley-Watkins-Hilsum-Gunn effect in compensated GaAs
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 607-610
- https://doi.org/10.1016/0038-1101(88)90352-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Electron mobility and velocity in compensated GaAsApplied Physics Letters, 1986
- Subthreshold electron velocity-field characteristics of GaAs and In0.53Ga0.47AsJournal of Applied Physics, 1985
- Electron transport properties in GaAs at high electric fieldsSolid-State Electronics, 1980
- Design criteria for GaAs MESFETs related to stationary high field domainsSolid-State Electronics, 1980
- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970
- A simple analysis of stable domain propagation in the Gunn effectBritish Journal of Applied Physics, 1966
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963