Narrowband detection at long wavelengths with epitaxial PbySn1−ySe films
- 15 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (8) , 536-538
- https://doi.org/10.1063/1.89768
Abstract
Narrowband photovoltaic detectors were prepared using two PbySn1−ySe epitaxial layers of slightly different alloy compositions grown on BaF2 substrates. Using Pb to form Schottky barrier detectors has yielded devices with D*λ (10.6 μm) =7.0×1010 cm Hz1/2 W−1 and spectral half‐bandwidths of 6000 Å. These devices are insensitive to variations in incident angle due to the large refractive indices of PbySn1−ySe.Keywords
This publication has 3 references indexed in Scilit:
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