Thin-film (Pb,Sn)Se photodiodes for 8–12-μm operation
- 15 July 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (2) , 98-100
- https://doi.org/10.1063/1.88983
Abstract
Photodiodes have been made from thin films of p‐type (Pb,Sn)Se on BaF2 substrates. Surface inversion using Pb barriers has given devices with D* (10.1 μm) ≳5×1010 cm Hz1/2 W−1 and D* (11.5 μ) ≳2×1010 cm Hz1/2 W−1 at 77 K with zero‐bias resistance‐area products up to 2 Ω cm2. Quantum efficiencies of the best devices were about 0.5.Keywords
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