Photodiodes fabricated in epitaxial PbTe by Sb+ ion implantation
- 15 December 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (12) , 682-683
- https://doi.org/10.1063/1.1654789
Abstract
Photodiodes in thin films of epitaxial PbTe grown on BaF2 have been fabricated using Sb+ ion implantation to create an n‐type layer in p‐type films. At 77 °K, 15‐mil‐square diodes had typical zero‐bias resistances of 1 MΩ. With the infrared radiation incident on the n‐type implanted layer, peak detectivities at 5.3 μm of 4.5 χ 1011 cm Hz1/2/W were observed in reduced background. Quantum efficiencies were typically 55%. With the radiation incident on the p‐type side through the BaF2 substrate, the detectivity was much more sharply peaked with the peak occurring at 5.5 μm. The peak detectivity and quantum efficiency values in this case were similar to those for incidence on the n‐type implanted layer.Keywords
This publication has 4 references indexed in Scilit:
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