Epitaxial PbSe Schottky-barrier diodes for infrared detection
- 15 June 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (12) , 633-635
- https://doi.org/10.1063/1.1655084
Abstract
The photovoltaic properties and infrared response of epitaxial PbSe Schottky‐barrier diodes are reported. The temperature dependence of the zero‐bias resistance suggests that generation/recombination is the dominant transport mechanism. At 77 °K the devices are limited by the 290 °K background at f/0.6. With further reduction of the background they attain Johnson‐noise‐limited peak detectivities of 5×1011 cm Hz1/2 W−1. The diode quantum efficiencies are reflection loss limited and reach 70%.Keywords
This publication has 6 references indexed in Scilit:
- Epitaxial PbSe and Pb1−xSnxSe: Growth and electrical propertiesJournal of Applied Physics, 1974
- Photovoltaic effect in lead selenide p-n junctionsJournal of Applied Physics, 1973
- Injection luminescence and laser action in epitaxial PbTe diodesApplied Physics Letters, 1972
- Infrared Detection by Schottky Barriers in Epitaxial PbTeApplied Physics Letters, 1971
- Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTePhysical Review B, 1965
- A Photosensitive Single Crystal p-n Junction in Lead SelenideJournal of the Electrochemical Society, 1961