Injection luminescence and laser action in epitaxial PbTe diodes
- 1 July 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (1) , 5-6
- https://doi.org/10.1063/1.1654213
Abstract
Thin‐film diode lasers have been made from Schottky barriers on epitaxial PbTe. At 77 °K the spontaneous emission spectrum agrees with that calculated for direct band‐to‐band transitions. At 12 °K laser action is observed in the pulsed mode with an average current density, at threshold, of (2–3) × 102 A cm−2. This is the first observation of diode laser action from evaporated thin films of any semiconductor.Keywords
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