High-Mobility Epitaxial Layers of PbTe and Pb1−xSnxTe Prepared by Post-Growth Annealing
- 1 October 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (11) , 4522-4525
- https://doi.org/10.1063/1.1659813
Abstract
Postgrowth annealing has been found to give layers of PbTe and Pb1−xSnxTe (with x ≈ 0.2) with much larger low‐temperature Hall mobilities than as‐grown layers. At temperatures down to about 50 °K the Hall mobilities are close to those of good bulk crystals. Below 50 °K there is a tendency to saturation at values greater than 105 cm2 V−1 sec−1. Structural studies indicate that both as‐grown and annealed specimens are single crystals with about the same concentration of low‐angle grain boundaries as the BaF2 substrates. It is suggested that the annealing process removes an excess of native defects.This publication has 8 references indexed in Scilit:
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