Electrical Properties of Cr-SiO Cermet Films
- 1 December 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (13) , 5087-5089
- https://doi.org/10.1063/1.1709280
Abstract
The Hall coefficient, temperature coefficient of resistance, and conductivity of Cr‐SiO cermet films were measured as a function of film composition. The behavior of the Hall coefficient indicates this material should be treated as a two‐carrier system. A model is proposed which may account for this behavior and for the dependence of the temperature coefficient of resistance on small concentrations of SiO.This publication has 1 reference indexed in Scilit:
- Effect of Stress on the Hall Coefficient of Chromium FilmsJournal of Applied Physics, 1967