Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor deposition
- 6 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (1) , 68-70
- https://doi.org/10.1063/1.107376
Abstract
We succeeded in the fabrication of GaAs wires by an electron beam induced selective growth technique, for the first time. In situ irradiation of the electron beam, with simultaneous supply of tri‐methyl‐gallium (TMG) and cracked AsH3, formed a GaAs quasiquantum wire structure as narrow as 300 nm selectively. Auger analysis and dependence of the growth on source materials and types of substrate suggest that the selective growth results from the decomposition of TMG by the electron beam irradiation.Keywords
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