High performancep+-gatepMOSFETs with N2O-nitrided SiO2gate films
- 8 November 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (23) , 1932-1933
- https://doi.org/10.1049/el:19901250
Abstract
Sub-micrometre p+-gate surface-channel pMOSFETs have been successfully fabricated with 6–10nm-thick nitrided SiO2 gate films formed in an N2O ambient. The devices have excellent reliability in hot-carrier-induced degradation because of the good abilities of N2O-nitrided SiO2 films in both the blocking of boron penetration and the reduction in electron traps.Keywords
This publication has 1 reference indexed in Scilit:
- Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003