Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs)

This publication has 8 references indexed in Scilit:

• The effect of fluorine in silicon dioxide gate dielectrics
  IEEE Transactions on Electron Devices, 1989
• Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology
  IEEE Electron Device Letters, 1989
• Hot-electron hardened Si-gate MOSFET utilizing F implantation
  IEEE Electron Device Letters, 1989
• Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film
  Journal of Applied Physics, 1987
• A symmetric submicron CMOS technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
• Design tradeoffs between surface and buried-channel FET's
  IEEE Transactions on Electron Devices, 1985
• Twin-Tub CMOS II-An advanced VLSI technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982
• Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2]
  Journal of the Electrochemical Society, 1973