Oxide defect densities and related breakdown lifetimes
- 1 October 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 143 (2) , 119-125
- https://doi.org/10.1016/0040-6090(86)90380-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin OxidesJournal of the Electrochemical Society, 1985
- Acceleration Factors for Thin Oxide BreakdownJournal of the Electrochemical Society, 1985
- Time-dependent-dielectric breakdown of thin thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1985
- Determination of breakdown rates and defect densities in SiO2Thin Solid Films, 1982
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972