Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A GaAs MESFET large-signal circuit model for nonlinear analysisPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Choosing an optimum large signal model for GaAs MESFETs and HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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- Determination of the Basic Device Parameters of a GaAs MESFETBell System Technical Journal, 1979
- A Technique for Predicting Large-Signal Performance of a GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1978
- Simplified GaAs m.e.s.f.e.t. model to 10 GHzElectronics Letters, 1977