Choosing an optimum large signal model for GaAs MESFETs and HEMTs
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1279-1282 vol.3
- https://doi.org/10.1109/mwsym.1990.99812
Abstract
Seven large signal MESFET models and three newly developed HEMT (high-electron-mobility transistor) models have been compared, providing the microwave circuit designer with a practical benchmark. The error for each model is quantified and minimized using a modified Newton's method with the restricted step technique of K. Levenberg (1944) and D. Marquardt (1963). This minimum obtainable error is used as a basis for comparing the models. The validity of this approach is confirmed by comparing predicted to measured large-signal performance made on a Triquint 0.5- mu m-gate-length MESFET. The model comparison tool has also been utilized to develop a general approach to large signal HEMT modeling for circuit simulation applications. A 0.7- mu m-gate-length pseudomorphic HEMT device was used for this portion of the study.Keywords
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