Comparison of compensation ratios determined by photoluminescence and electrical methods in epitaxial GaAs
- 30 September 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 27 (12) , 1421-1424
- https://doi.org/10.1016/0038-1098(78)91586-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation IntensityPhysical Review B, 1972
- Impact Ionization of Donors in Semiconductors as a Tool for Photoluminescence InvestigationsJournal of Applied Physics, 1972
- Radiative Lifetimes of Donor-Acceptor Pairs in-Type Gallium ArsenidePhysical Review B, 1969